BC557 SOT 23 PDF

Product data sheet. Supersedes data of Apr Oct DISCRETE SEMICONDUCTORS. BC; BC PNP general purpose. PNP general-purpose transistors in a small SOT23 (TOAB) Surface-Mounted Device. (SMD) plastic package. Table 1. Product overview. Low noise input stages of audio frequency equipment. DESCRIPTION. PNP transistor in a SOT23 plastic package. NPN complements: BC

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The collector—emitter current can be viewed as being controlled by the base—emitter current current controlor by the base—emitter voltage voltage control.

This two-port network is particularly suited to BJTs as it lends itself easily to the analysis of circuit behaviour, and may be used to develop further accurate models. The proportion of electrons able to cross the base and reach the collector is a measure of the BJT efficiency.

Bipolar junction transistor

A bipolar junction transistor bipolar transistor or BJT is a type of transistor that uses both electron and hole charge carriers. BJTs can be thought of as voltage-controlled current sourcesbut are more simply characterized as current-controlled current sources, or current amplifiers, due to the low impedance at the base.

F is from forward current amplification also called the current gain. However, to accurately and reliably design production BJT circuits, the soy for example, Ebers—Moll model is required.

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The BJT is bcc557 the choice for demanding analog circuits, especially for very-high-frequency applications, such as radio-frequency circuits for wireless systems. In this “on” state, current flows from the collector to the emitter of the transistor.


Jan 31, 3. By convention, the direction of current on diagrams is shown as the direction that a positive charge would move. These views are related by the current—voltage relation of the base—emitter junction, which is the usual exponential current—voltage curve of a p—n junction diode. Because base—emitter voltage varies as the logarithm of the base—emitter and collector—emitter currents, a BJT can also be used to compute logarithms and anti-logarithms.

Retrieved August 10, The collector—base junction is reverse-biased, and so little electron injection occurs from the collector to the base, but electrons that diffuse through the base towards the collector are swept into the collector by the electric field in the depletion region of the collector—base junction. Charge flow in a BJT is due to diffusion of charge carriers across a junction between two regions of different charge concentrations.

However, because base charge is not a signal that is visible at the terminals, the current- and voltage-control views are generally used in circuit design and analysis. By using this site, you agree to the Terms of Use and Privacy Policy.

BC smd sot23 datasheet & applicatoin notes – Datasheet Archive

Another model commonly used to analyze BJT circuits is the h-parameter model, closely related to the hybrid-pi model and hc557 y-parameter two-portbut using input current and output voltage as independent variables, rather than input and output voltages. In an NPN transistor, when positive bias is applied to the base—emitter junction, the equilibrium is disturbed between the thermally generated carriers and the repelling electric field of the n-doped emitter depletion region.

Ebers—Moll model for a PNP transistor. Physics and Technology of Heterojunction Devices. Simplified cross section of a planar NPN bipolar junction transistor.


Poon, “An integral charge control model of bipolar transistors”, Bell Syst. For translinear circuitsin which the sof I—V curve is key to the operation, the transistors are usually modeled as voltage-controlled current sources whose transconductance is proportional to their collector current.

Working on a table for our book, soliciting your opinions, info and advice. This means that interchanging the collector and the emitter makes the transistor leave the forward active mode and start to operate in reverse mode. Holt, Reinhart, and Winston.

BC [] : Sunrom Electronics/Technologies

Modern Semiconductor Devices bc557 Integrated Circuits. It is typically greater than 50 for small-signal bf557, but can be smaller in transistors designed for high-power applications. SOT 23 component soldering? As well, as the base is lightly doped in comparison to the emitter and collector regionsrecombination rates are low, permitting more carriers to diffuse across the base region. For DC conditions they are specified in upper-case. Networks of transistors are used to make powerful amplifiers with many different applications.

Compact Models of Bipolar Junction Transistors, pp. NPN is one of the slt types of bipolar transistors, consisting of a layer of P- doped semiconductor the “base” between two N-doped layers.

In active mode, the ratio of the collector current to the base current is called the DC current gain. That drift component of transport aids the normal diffusive transport, increasing the frequency response of the transistor by shortening the transit time across the base.