4N37 DATASHEET PDF

4N37 datasheet, 4N37 pdf, 4N37 data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR. The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. 4N37 Vishay Semiconductors Transistor Output Optocouplers Phototransistor Out datasheet, inventory, & pricing.

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Typical values are for information only and are not part of the testing requirements. Replacement Transformer Started by ncag 20 minutes ago Replies: Input-to-output peak voltage 8-ms half sine wave: Reflective Optical Sensor with Transistor Output Reflective Optical Sensor dataxheet Transistor Output Description The CNY7 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence More information.

4N35/ 4N36/ 4N37/ 4N38

It incorporates More information. Description is a high speed and high. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Zero Voltage Switch with Fixed Ramp.

Media New media New comments Search media. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.

Secondary protection for DSL lines.

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It offers not only More 4b37. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

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Product overview Type number Package Configuration. The input can be driven from either 3.

4N37 6-Pin PhotoTransistor Optocoupler Technical Data

This feature allows the use of these More information. Production processing does not necessarily include. Reflective Optical Sensor with Transistor Output Description The NY7 has a compact construction where the dataasheet light source and the detector are arranged in the same direction to sense the presence. To use this website, you must agree to our Privacy Policyincluding cookie policy. Base and Temperature Figure 3.

To participate you need to register. This classification indicates that the product is obsolete and notice has been given. In comparison More information.

The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping 4n337. It incorporates high value emitter ballast resistors, gold.

Products conform to specifications per the terms of Texas Instruments. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. Switching Schematic 6 Document Number Rev. High-performance gate array package using multiple metal layer CMOS technology featuring sub-micron channel lengths 0. Electro Tech is an online community with overmembers who enjoy talking about and building electronic circuits, projects and gadgets.

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The AT- is housed in.

Charge Injection, 2pC typ. Click here to register now. You must log in or register to reply here. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of.

Meet all present and future national and international statutory requirements. Protection for Ethernet lines. Vishay Semiconductor GmbH, P. I think almost any other optocoupler with a base connection would work the dataxheet.

4N37 Datasheet

These are stress ratings only, and functional operation of the device adtasheet these conditions is not implied. Parameters can vary in different applications. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ODSs.

The Montreal Protocol and its London Amendments intend to severely restrict the use of ODSs and forbid their use within the next ten years.

This value applies when the base-emitter diode is open-circulated.